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    • 专利摘要:
    A thermal pattern sensor (100) having a plurality of pixels (102), each pixel comprising at least one pyroelectric capacitance formed by at least one pyroelectric material portion (106) disposed between a lower electrode (108) and an upper electrode (110), wherein one (108) of the lower and upper electrodes corresponds to a reading electrode of the pixel and wherein a heating element capable of heating the pyroelectric material portion of the pyroelectric capacitance of said pixel by Joule effect during a measurement of the thermal pattern by the pyroelectric capacitance of said pixel is formed by the other (110) of the lower and upper electrodes.
    公开号:FR3044407A1
    申请号:FR1561579
    申请日:2015-11-30
    公开日:2017-06-02
    发明作者:Jean-Francois Mainguet；Puchades Josep Segura；Margaux Vigier
    申请人:Commissariat a lEnergie Atomique CEA；Safran SA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    THERMAL PATTERN SENSOR DESCRIPTION
    TECHNICAL FIELD AND PRIOR ART The invention relates to a thermal pattern sensor, for example a fingerprint sensor by thermal detection.
    It is known to produce a fingerprint sensor comprising thermal detection means. These thermal detection means may correspond to pyroelectric elements, diodes, thermistors or any other temperature-sensitive element making it possible to convert a temperature variation into a variation of electrical potential or current.
    Fingerprint detection can be carried out by so-called "passive" sensors exploiting a temperature difference between the finger and the sensor, as described in US Pat. No. 4,394,773, US Pat. No. 4,429,413 and US Pat. No. 6,289,114. however, have the disadvantage of making a measurement that depends solely on the temperature difference between the finger and the sensor. It may therefore happen that the level of the signal obtained is zero when the finger and the sensor are at the same temperature, or that the contrast of the captured images varies and then poses problems during the subsequent processing of the images.
    To eliminate the problems raised by the passive heat sensors, and especially in the case of a static acquisition where the finger does not move, so-called "active" fingerprint sensors have been proposed, as for example that described in the US documents In such a sensor, each pixel comprises a pyroelectric capacitor formed of two conductive electrodes between which a portion of pyroelectric material is disposed, and a heating element. This heating element dissipates a certain amount of heat in the pixel, and heating of the pixel is measured after a certain acquisition time, called integration time, in the presence of the finger on the sensor. This makes it possible to distinguish, at the level of each pixel, the presence of a peak or a valley of the detected imprint according to whether the heat is absorbed by the skin (pixel in the presence of a crest of the impression) or preserved in the pixel (pixel in the presence of a valley of the footprint). This leads to a lower final temperature in the case of a pixel in the presence of a peak, where the heat is absorbed by the skin, compared to a pixel in the presence of a valley.
    In the first order, such a sensor can measure the heat capacity, also called specific heat or specific heat capacity, of an element in contact with the sensor. The measurements obtained also depend on the thermal conductivity between the sensor and the part of the element (peak or valley in the case of a fingerprint) in the presence.
    To form an active thermal sensor, the pixels of this sensor are coupled to heating elements generally using the Joule effect which dissipates heat from a resistive element which is traversed by a current. One of the levels of the technological stack forming the pixels is advantageously used to form these heating elements. For example, it is possible to use one of the conducting levels used to make the transistors and the interconnections of the sensor if one of these levels comprises a conductive material having adequate resistivity and on which it is sufficient to apply one of the voltages already available. , for example the supply voltage of the sensor, to generate heating by Joule effect. This is particularly used when the sensor comprises transistors of the TFT ("Thin-Film Transistor" or thin film transistor) type produced on a glass substrate.
    The pixels of such a sensor are arranged by forming a matrix of several rows and several columns. The reading of the pixels is generally done line by line. The heating elements can then also be controlled by line using a transistor at the head of each line and thus not having to add control transistors in the pixels. Each line of heating elements is for example connected, on one side of the pixel matrix, to ground, and on the other side to a control transistor connected to a power supply adapted to control the current flowing through the elements. heating, and therefore the thermal power injected by Joule effect in the pixels by these heating elements.
    In EP 2 385 486 A1, the heating elements are made from a metal layer also for producing the upper or lower electrodes of the pyroelectric capacitances of the pixels. These heating elements are for example made in the form of a conductive coil partially surrounding each of the upper or lower electrodes in the pixels. A single metal layer is therefore used for the realization of distinct elements (heating elements and upper or lower electrodes of the pyroelectric capacitors) fulfilling distinct functions. FIG. 1 schematically represents such a configuration, in which the same metallic level, in this case the upper metallic level, is used for producing the upper electrodes 10 and a conductive coil 12 partially surrounding the upper electrodes 10 and making it possible to heat the capacitors laterally. However, the use of the same metal level to form these upper or lower electrodes and the heating elements has the disadvantage of resulting in an arrangement of the heating elements next to the pyroelectric capacitors of the electrodes. pixels. These heating elements thus realize a lateral heating of the pyroelectric capacitors. However, such lateral heating is not optimal, especially when this pixel uses a pyroelectric material that is not a good thermal conductor.
    It is possible to realize the heating elements by using an additional metallic level, different from those used for producing the upper or lower electrodes of the pyroelectric capacitors, disposed above or below the pixels. However, this has the disadvantage of moving the heating elements away from the pyroelectric capacitors. In addition, the addition of such a metallic level represents an additional cost over the previous solution which uses the same metal level to form the upper or lower electrodes of the pyroelectric capacitors and the heating elements.
    STATEMENT OF THE INVENTION
    An object of the present invention is to provide an active thermal pattern sensor, that is to say having heating elements of the sensor pixels, not having the disadvantages of the active sensors of the prior art.
    For this, the present invention proposes a thermal pattern sensor comprising a plurality of pixels, each pixel comprising at least one pyroelectric capacitance formed by at least one portion of pyroelectric material disposed between a lower electrode and an upper electrode, in which one of the electrodes lower and upper corresponds to a reading electrode of the pixel and wherein a heating element capable of heating the pyroelectric material portion of the pyroelectric capacitance of said pixel by Joule effect during a measurement of the thermal pattern by the pyroelectric capacitance of said pixel is formed by the other of the lower and upper electrodes.
    It is therefore proposed to use directly one of the lower and upper electrodes of the pyroelectric capacitance of the pixel to form the heating element for heating the portion of pyroelectric material. Thus, the heating element is closer to the pyroelectric material to be heated, which greatly increases the amount of heat transmitted to it by the heating element compared to the configuration of the prior art in which the The heating element is formed from the same electrically conductive layer as that used for producing one of the upper and lower electrodes but which is arranged next to the pyroelectric capacitor. This increase in heating capacity is also found with respect to a heating element formed in an additional metallic level other than those used for producing the electrodes of the pyroelectric capacitors. The invention proposes, in a non-obvious manner, to directly use one of the electrodes of the pyroelectric capacitance of a pixel to form the heating element of this pixel, which amounts to using a heating resistor of the pixel also serving to the polarization of the pyroelectric capacitance of the pixel. This is possible because the application of a constant heating voltage on the electrically conductive element forming both one of the electrodes of the pyroelectric capacitance of the pixel and the heating element is also usable as such for polarize the pyroelectric capacitance.
    Such a sensor also has the advantage of simplifying the design of the electrodes with respect to the sensors of the prior art in which the heating elements and the upper electrodes are made from the same conductive layer but forming distinct elements. The expression "capable of heating the pyroelectric material portion of the pyroelectric capacitance of said pixel by the Joule effect during a measurement of the thermal pattern by the pyroelectric capacitance of said pixel" means that the Joule effect obtained is sufficiently important for the end of a certain measurement time (the integration time), the measurement obtained, that is to say the variation of electrical charges in the pyroelectric capacitance, corresponding to the measured temperature difference, is significant for detecting the thermal pattern. The Joule effect obtained may be such that a temperature variation of at least 0.5 K, for example about 1 K, of the pyroelectric material between a pixel in contact with the skin and a pixel which is not contact with skin can be obtained. The choice of the value of this temperature variation depends in particular on the sensitivity of the pyroelectric material, the size of the pixel and the noise of the reading circuit. The term "thermal pattern" designates a spatial distribution of the thermal characteristics of an object that is detectable by the sensor, for example the pattern of a fingerprint. The reading electrode of a pixel corresponds to the electrode on which the electrical charges generated in the pyroelectric capacitance of the pixel are recovered and then sent into a reading circuit of the sensor.
    The pyroelectric material may comprise for example a polyvinylidene fluoride or PVDF, and / or a polyvinylidene fluoride-trifluoroethylene or P (VDF-TrFE), and / or a ceramic such as PZT (lead titano-zirconate, or "Lead Zirconate Titanate "and / or crystals such as those known by the acronym TGS (Tris Glycine SDF) or LiTaO3 crystals. Other pyroelectric materials are possible, including all those that produce electrical charges according to a pyro-piezoelectric parameter.
    This configuration is advantageous because the sensor structure, which closely integrates the heating element vis-à-vis the pyroelectric material, compensates for the low thermal conductivity of PVDF, or any other pyroelectric material with low thermal conductivity.
    The sensor may further comprise a substrate on which the pyroelectric capacitances of the pixels are arranged, the lower electrode of the pyroelectric capacitance of each pixel being able to be disposed between the substrate and the portion of pyroelectric material of the pyroelectric capacitance of the pixel, and The upper electrode of the pyroelectric capacitance of each pixel may form the heating element of said pixel. In this configuration, it is proposed to use the upper electrode of the pyroelectric capacitance of the pixel as a heating resistor and as a bias electrode on which a constant electric potential is applied. It is in this case the lower electrode, that is to say the one closest to the substrate, which serves as an electrode for reading the electrical charges generated in the pixel.
    The electrodes of the pyroelectric capacitances of the pixels corresponding to the reading electrodes of the pixels may be formed by first portions of electrically conductive material which are distinct and electrically isolated from one another.
    The electrodes of the pyroelectric capacitances of the pixels corresponding to the heating elements may be electrically connected to one another and be formed by at least a second portion of electrically conductive material having two ends on which a heating voltage of the pyroelectric material of the pyroelectric capacitances of said pixels is suitable. to be applied. In this configuration, the heating voltage intended to be applied to the ends of the second portion of electrically conductive material also forms the polarization potentials of the pyroelectric capacitances of said pixels. These potentials are different from one pixel to another. By maintaining a constant heating voltage during a measurement, the polarization potentials are therefore also constant throughout the measurement, which ultimately allows the measurement of the variation of electrical charges created in the pyroelectric capacitors.
    In an advantageous embodiment, the sensor may be such that: the pixels are arranged forming a matrix of several lines and several columns of pixels, the electrodes of the pyroelectric capacitances of each pixel line corresponding to the heating elements are electrically connected between them and are formed by a second portion of electrically conductive material separate from the second portions of electrically conductive material of the other lines of pixels, - each second portion of electrically conductive material has two ends on which a heating voltage of the pyroelectric material of the pyroelectric capacitors of the pixel line is apt to be applied.
    In this advantageous embodiment, the electrodes forming the heating elements of each line of pixels may correspond to a single second portion of electrically conductive material. Separate heating voltages (but not necessarily different values) are intended to be applied to the ends of each of the second portions of electrically conductive material. Each line of pixels is thus heated independently of one another, which is well suited when the matrix of pixels is read line by line because this avoids unnecessarily heating pixels to be read later. This configuration also makes it possible to have a uniform integration time for all the pixels of the matrix.
    In this case, one of the two ends of each second portion of electrically conductive material may be electrically connected to each other. The ends connected together can be connected to the ground.
    Each second portion of electrically conductive material may comprise, at each of the electrodes formed by said second portion of electrically conductive material, portions whose electrical resistance is greater than that of the remainder of said second portion of electrically conductive material. Such a configuration makes it possible to concentrate the heating at the level of the pyroelectric capacitors and to reduce a heat loss between the pyroelectric capacitors.
    The sensor may further comprise means for applying the heating voltage to the ends of the second or second portions of electrically conductive material such that, during a measurement of the thermal pattern by one of the pixels, the value of the potential the electrode forming the heating element of said pixel is substantially constant throughout the measurement.
    The pixels can be arranged by forming a matrix of several lines and several columns of pixels. Each pixel may comprise at least one line selection transistor adapted to receive on its gate a control signal common to all the pixel line to which said pixel belongs and, when the line selection transistor is in the on state, electrically connecting the reading electrode of said pixel to a read circuit comprising at least one amplifier and common to the pixels of the column to which said pixel belongs.
    In a first configuration, the line selection transistor may be connected to an inverting input of the amplifier, and the read circuit may further comprise: means for applying a reference voltage to a non-inverting input amplifier; a switch, or switch, connecting the inverting input of the amplifier to the output of the amplifier; a capacitance, for example a capacitor, connecting the inverting input of the amplifier to the output of the amplifier.
    In this first configuration, the read circuit performs a reading of a current, that is to say a direct reading of the electrical charges generated by the pyroelectric capacitors.
    In this case, the sensor may further comprise a control circuit able to implement, for reading a pixel line, at least the following steps: - setting the line selection transistors of the pixels of said line and closing of the switches of the reading circuits; - Application of the heating voltage at the ends of the second portion of electrically conductive material or one of the second portions of electrically conductive material associated with said pixel line; opening of the switches of the reading circuits; waiting for an integration time corresponding to the measurement of the thermal pattern by the pixels of said line; - reading of an output voltage of the amplifier.
    The first step of turning on the line selection and closing transistors of the switches of the read circuits makes it possible to set the potentials of the active nodes of the pixels of the line read to a known initial value corresponding to the value of the reference voltage applied to the non-inverting inputs of the amplifiers of the read circuits.
    When the heating time of the pixels of a read line is greater than the integration time by these pixels, the reading method can comprise, between the beginning of the heating of the pixels and the beginning of the measurement of the thermal pattern, a setting of the blocked state of the line selection transistors of the pixels of said line, then, after the opening of the switches of the read circuits, an on state of the line selection transistors of the pixels of said line.
    In this configuration, the control circuit can stop the application of the heating voltage to the ends of the second portion of electrically conductive material of this line of pixels after reading the pixels of this line.
    In a second configuration, each pixel may further comprise: a reset transistor able to apply a reset voltage to the reading electrode of the pixel; a voltage follower transistor whose gate is connected to the reading electrode of the pixel and of which one of the source and drain electrodes is connected to the line selection transistor.
    In this second configuration, the reading circuit performs a voltage reading of the measurement made because the voltage follower transistor makes a copy of the voltage of the reading electrode which is then read by the amplifier.
    In this case, the sensor may further comprise a control circuit capable of implementing, for reading a line of pixels, at least the following steps: - turning on the reset transistors of the pixels of the said line; setting the line selection transistors of the pixels of said line to the off state; - Application of the heating voltage at the ends of the second portion of electrically conductive material or one of the second portions of electrically conductive material associated with said pixel line; setting the reset transistors of the pixels of said line to the off state; waiting for an integration time corresponding to the measurement of the thermal pattern by the pixels of said line; - Turning the line selection transistors of the pixels of said line; reading of the voltages applied to the inputs of the amplifiers of the reading circuits.
    At the beginning of the implementation of the steps above, the reset transistors are in the on state so that the reset voltages are applied to the read electrodes of the read pixels.
    BRIEF DESCRIPTION OF THE DRAWINGS
    The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIG. 1 represents a view from above of a portion of a thermal pattern sensor according to the prior art; - Figure 2 shows a sectional view of a pyroelectric capacitance of a pixel of a thermal pattern sensor, object of the present invention; FIG. 3 represents a view from above of a portion of a thermal pattern sensor, object of the present invention, according to a first embodiment; FIG. 4 represents a view from above of a portion of a thermal pattern sensor, object of the present invention, according to a second embodiment; FIG. 5 represents a view from above of a portion of a thermal pattern sensor, object of the present invention, according to a variant of the second embodiment; FIGS. 6 and 7 represent first and second exemplary embodiments of circuits for reading the pixels of a thermal pattern sensor, object of the present invention.
    Identical, similar or equivalent parts of the different figures described below bear the same numerical references so as to facilitate the passage from one figure to another.
    The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable.
    The different possibilities (variants and embodiments) must be understood as not being exclusive of each other and can be combined with one another.
    DETAILED PRESENTATION OF PARTICULAR EMBODIMENTS
    Referring first to FIG. 2, there is shown a sectional view of a pyroelectric capacitance of a pixel 102, which forms the thermal detecting element of the pixel 102, of a thermal pattern sensor 100.
    The sensor 100 comprises a substrate 104 corresponding for example to a glass substrate or a semiconductor substrate (for example silicon). A glass substrate 104 may be used when the sensor 100 is made with TFT transistors, while a semiconductor substrate 104, for example silicon, may be used when the sensor 100 comprises transistors made in MOS technology. The substrate 104 may also be a flexible substrate, for example based on polyimide or PEN (polyethylene naphthalate) or PET (polyethylene terephthalate), on which the electronic elements of the sensor 100 are made by printed electronic technology (for example via a embodiment with inkjet type writing heads) or lithography.
    The pixels 102 of the sensor 100 are arranged forming a matrix of several rows and several columns of pixels 102. The pitch of the pixels 102 in the (X, Y) plane (i.e., the plane of the substrate 104) is for example between about 25 pm and 100 pm. In the case of a 100 resolution sensor equal to 500 dpi ("dot per inch"), the pitch of the pixels 102 is equal to 50.8 μm.
    Each of the pixels 102 of the sensor 100 comprises measurement means, or detection, thermal formed by a pyroelectric capacitance. Each pyroelectric capacitor comprises a portion 106 of pyroelectric material disposed between a lower electrode 108 and an upper electrode 110. The pyroelectric material of the portion 106 is advantageously P (VDF-TrFE) or PVDF. Alternatively, the pyroelectric material of the portion 106 may be ΓΑΙΝ or PZT, or any other pyroelectric material adapted to form a pyroelectric capacitance. The thickness of the portion 106 is for example between about 500 nm and 10 pm.
    The electrodes 108, 110 each comprise at least one electrically conductive material, for example a metallic material such as titanium with a thickness equal to about 0.2 μιτι, and / or molybdenum and / or aluminum and / or conductive oxide such as ΓΙΤΟ (indium tin oxide) and / or a conductive polymer. One of the electrodes 108, 110, advantageously the upper electrode 110, or each of the two electrodes 108, 110, may be formed by a stack of several electrically conductive materials, for example a Ti / TiN / AICu stack. The thickness of each of the electrodes 108, 110 is for example between about 0.1 μm and 1 μm.
    A protective layer 109, corresponding for example to a layer of aluminum nitride or of any other material suitable for producing this layer, covers the upper electrode 110. The thickness of the protective layer 109 may be between a few microns and about 100 pm. An upper face 113 of the protective layer 109 corresponds to the surface above which is the thermal pattern to be detected, for example a finger whose fingerprint is intended to be detected.
    In order for the PVDF of the portion 106 to acquire its pyroelectric (and also piezoelectric) properties, this material is subjected, once for the entire lifetime of the pyroelectric capacitor, to an electric field of approximately 100 volts per micron of thickness. of PVDF. The molecules inside the PVDF orient, and remain oriented, even when the PVDF is no longer subject to this electric field. The PVDF can thus be polarized by applying an initial bias voltage across the electrodes 108, 110.
    After this initial polarization, when the portion 106 is subjected to a temperature variation ΔΤ, this temperature variation ΔΤ causes the appearance of an additional electric field generating AQ charges between the electrodes 108, 110 such that: AQ = S.y.AT.
    The parameter S corresponds to the surface of the portion 106 opposite each of the electrodes 108, 110. The parameter y corresponds to the pyroelectric coefficient of the pyroelectric material of the portion 106. For example, the pyroelectric coefficient y of the PVFD is equal to about 32 pC / m2 / K.
    The portion 106 and the electrodes 108, 110 forming a capacity of value C to which parasitic capacitances Cp are added, the generated AQ charges induce a difference of electrical potentials AV between the electrodes 108, 110 such that: (C + Cp) AV = AQ = SyAT.
    In addition to the charges generated by the capacitance value C, other charges are also generated via the parasitic capacitances Cp present, for example those linked to the gate of the read transistor in the case of a voltage reading circuit.
    When the potential on the reading electrode (formed by one of the electrodes 108, 110) is fixed (so-called "current" reading), the generated charges flow towards the reading circuit by forming an integrated current at the output, with in that case :
    AQ S.y.AT ~~ ζ with ζ corresponding to the integration time during which the measurement is performed by the pixel. Such a current reading has the advantage of being insensitive, in the first order, to the value of the capacitances, in particular parasitic capacitances.
    The sign of the electric voltage AV obtained between the electrodes 108, 110, or the direction of the current in the case of a current reading, depends on the direction of the electric field with which the PVDF of the portion 106 was initially polarized. In the case of certain other pyroelectric materials such as aluminum nitride, this direction of initial polarization depends on the manner in which the pyroelectric material has been deposited, its order and its crystallographic orientation. In addition, the obtained electric voltage AV, or the direction of the current, can be positive or negative depending on whether the temperature variation experienced by the pyroelectric capacitance is positive or negative.
    The sensor 100 also comprises heating elements dissipating a certain amount of heat in the pixels 102, and in particular in the portion 106 of pyroelectric material. Unlike pyroelectric sensors of the prior art, these heating elements are not elements attached to or above or below the pyroelectric capacitors, but are formed directly by one of the electrodes 108, 110 of each of the pyroelectric capacitors. In the example of FIG. 2, the heating element of the pyroelectric capacitance of the pixel 102 is formed by the upper electrode 110. The other electrode of the pyroelectric capacitor, here the lower electrode 108, serves as the reading the pixel 102.
    The heating of the portion 106 of pyroelectric material is obtained by circulating a current in the electrode for forming the heating element. However, this electrode is also used for the polarization of the pyroelectric capacitance. Thus, the heating resistor of each of the pixels 102 also serves to polarize an electrode of the pyroelectric capacitance formed by the portion 106 and the electrodes 108, 110 of each of the pixels 102 when measured by these pixels 102 (the polarization applied during a measurement is different from the initial polarization of the PVDF previously described). The use of one of the electrodes 108, 110 of the pixels 102 to form the heating elements is possible because the value of the electric potential applied to this electrode during a reading of the thermal pattern is constant.
    FIG. 3 represents a view from above of several pixels 102 of the sensor 100 according to a first embodiment.
    The lower electrodes 108, which correspond to the reading electrodes of the pixels on which the charges generated by the pyroelectric capacitors will be recovered to be read, are formed by first portions of electrically conductive material which are distinct and electrically isolated from one another. These first conductive portions each have a rectangular section in the plane of the substrate 104 (plane (X, Y)), and are arranged next to one another in the form of a matrix to form the pixel matrix 102. pyroelectric material is made in the form of a single portion 106 covering all the lower electrodes 108. The upper electrodes 110 of the pixels are formed by a second portion of electrically conductive material 111 common to all the pixels 102 and forming the heating elements of the pixels 102. The upper electrodes 110 of the pixels 102 are electrically connected to each other. The second portion of electrically conductive material 111 is composed of several parts 112 extending parallel to each other and covering each of the portions of the portion 106 forming the pyroelectric capacitors of the same column of the matrix of pixels 102. Parts 114 of the second portion of electrically conductive material 111 connect the portions 112 in series and extend perpendicularly to these portions 112. The second portion of electrically conductive material 111 forming the upper electrodes 110 of the pixels 102 here has a shape of "serpentine ".
    The second portion of electrically conductive material 111 also has two ends 116, 118 on which a heating voltage is intended to be applied. One of the two ends 116, 118 is for example connected to ground, and a non-zero heating potential is applied on the other end by heating means, for example formed by an electrical connection applying an existing voltage in the sensor. on end 116. For example, if end 118 is connected to ground and a heating heating potential is applied to end 116, then a current flows from end 116 to the end 116. 118 end of the second portion 111, causing a Joule heating in the second portion 111, and thus heating the portion 106 of the pixels 102. The value of the heating voltage is chosen according to the desired heating power, this power being a function in particular of the thickness of the portion 106 intended to be heated as well as the thickness of the protective layer 109, the pyroelectric coefficient of the material of the portions 106, a sensitivity of the reading circuit, the noise level of the reading circuit and the integration time. In a pixel 102, the heating power is for example between about 0.1 mW and 10 mW.
    Advantageously, for all the embodiments of the invention, the second portion of conductive material 111 serving as a heating resistor for the pixels 102 also forms the upper electrode 110 of the pixels 102 which is disposed above the pyroelectric material and not the lower electrode 108 because this arrangement makes it possible to connect to the mass of the sensor 100 the conductive portions of the pyroelectric capacitors that are closest to the outside of the sensor 100. Such an arrangement forms a protection against electrostatic discharges ( ESD) because if such a discharge occurs, there is then a preferential way to discharge the electrical charges due to this discharge, which limits the voltage breakdown with fragile active elements of the sensor 100 such as transistors.
    It is also proposed a sensor 100 according to a second embodiment, shown in FIG. 4. In this second embodiment, the sensor 100 comprises several second portions of conductive material 111 each forming the upper electrodes 110 of the pixels 102 arranged on a same line. Six second portions of conductive material 111 are shown in FIG. 4. Each of the second portions 111 has a first end 116 on which is applied a heating potential, and a second end 118 connected to another conductive portion 120 common to all second portions 111 and connected to the mass. The electric potentials applied on the first ends 116 of the second portions 111 are similar from one portion 111 to the other.
    With respect to the first embodiment, this second embodiment makes it possible to heat and polarize each row of pixels 102 independently of each other, which simplifies the reading of the pixels 102. This notably reduces the risk of non-uniformity of reading of the pixels. pixels 102 which would be due to a reading time of the pixels 102. The power required to heat the pixels 102 is also reduced because the pixels 102 are not all heated simultaneously.
    The values of the heating voltages applied to the second portions 111 are adjusted with respect to the resistivity of the metal of the second portions 111 in order to produce the desired thermal energy in the pixels 102. For example, a sensor 100 having a matrix is considered 400 x 300 pixels at 500 dpi (which corresponds to pixels 102 arranged next to each other with a pitch of 50.8 pm). For such a sensor 100, when the second portions 111 comprise titanium, each have a thickness equal to about 200 nm and have a resistivity of the order of 2 Ohm per square, each of the second portions 111 forming the upper electrodes 110 of a line of 400 pixels each having a width (dimension along the Y axis of FIG. 4, that is to say the dimension lying in the plane in which the main surface of the second portion 111 extends and which is perpendicular to the main dimension, i.e. the length, of the second portion 111) equal to about 40 pm has a resistivity equal to 400 x 50/40 = 500 squares, ie 1 kOhm. In order to obtain a power dissipated per pixel 102 equal to approximately 0.1 mW, ie approximately 40 mW for each pixel line 102, an electrical potential of approximately 6.3 V is applied on each of the ends 116 of the second portions 111. obtain about 1 mW of power dissipated per pixel, an electric potential of about 20 V is applied on each of the ends 116 of the second portions 111.
    In the second embodiment shown in Fig. 4, the second portions 111 form conductive strips of uniform width extending along a line of pixels 102. The heat is thus uniformly diffused along each conductive strip. . According to an alternative embodiment shown in Figure 5, the width of each of the second portions 111 is not uniform throughout its length. Parts 122 of each second portion 111 located opposite the lower electrodes 108, that is to say centered on each pixel 102, have a smaller width than other parts 124 disposed astride two pixels and each of which connects two parts 122. This variant embodiment makes it possible to concentrate the heating produced on each pixel 102 and to limit the heat losses between the pixels 102 because the electrical resistance increases at the junction between an adjacent portion 122 and a portion 124 ( these junctions being located on the pixels 102 and not between the pixels 102), which causes a greater Joule effect and a greater heat injection at these junctions. Having hot spots centered on pixels 102 also reduces diathermy problems, i.e., lateral heat transfer between neighboring pixels. This variant, however, causes a slight reduction in the pyroelectric charges generated because of the reduction in the area of the pyroelectric material facing the second portions 111, which means that a compromise must be found between the various thermal parameters, the reading speeds, etc. .
    These hot spots centered on the pixels 102 can be realized not by reducing the width of each of the second portions 111 at the pixels 102, but by reducing the conductive material thickness of the second portions 111 at the pixels 102.
    As a variant of the embodiments previously described, the conductive portions serving both for the polarization of the pyroelectric capacitors and for the heating of the pyroelectric material of the pixels 102 may not correspond to those forming the upper electrodes 110 of the pixels 102 but those forming the electrodes. In addition, shapes, or designs, of the conductive portion or portions that form both one of the electrodes of the pyroelectric capacitance of each pixel 102 and the heating elements of these pixels 102 other than those previously described can be envisaged.
    In addition to the pyroelectric capacitances of the pixels 102, the sensor 100 also comprises electronic elements making it possible to read the electrical charges generated by the pyroelectric capacitors and thus to read the thermal pattern detected by the sensor 100.
    FIG. 6 represents a first exemplary embodiment of these electronic elements making it possible to read the variation of electrical charges appearing in the pyroelectric capacitance of one of the pixels 102 of the sensor 100.
    The pixel 102 shown in FIG. 6 comprises a pyroelectric capacitance formed by a portion 106 of pyroelectric material disposed between two electrodes 108, 110. A heating heating potential for heating the portion 106 of pyroelectric material is applied to one of the two electrodes of the pyroelectric capacitance, for example the upper electrode 110 as in the previously described embodiments. The electrically conductive material on which the heating heating potential is applied forms a resistive heating element symbolized by a heating resistor 128. The other electrode (the lower electrode 108 in the example described here) forms a reading electrode of the pixel 102 and is connected to an active node 126 of the pixel 102.
    Each pixel 102 includes a line selection transistor 130. The gate of transistor 130 is connected to an electrical connection 133 common to all transistors 130 of the same line and on which a selection signal is to be applied. A first of the source and drain electrodes of the transistor 130 is connected to the active node 126 and a second of the source and drain electrodes of the transistor 130 is connected to an input of a read circuit 131 at the bottom of the column. This input of the read circuit 131 corresponds to the inverting input of a sense amplifier 132 corresponding for example to an operational amplifier. An electric biasing potential Vref is applied to the non-inverting input of the amplifier 132. The output of the amplifier 132 is looped back to its inverting input via a capacitor 134. A switch, or switch, 136 is connected in parallel with the capacitor 134 and makes it possible to bypass the capacitance 134. The output of the sense amplifier 132 is also connected to the input of an analog / digital converter 138. The sense amplifier 132, the capacity 134, the switch 136 and the analog / digital converter 138 are common to all the pixels 102 of the same column. The analog / digital converter 138 may be common to all the pixels 102 of the sensor 100, by adding multiplexing electronic elements between the outputs of the sense amplifiers 132 and the analog / digital converter 138.
    During a measurement of a temperature variation of the pixel 102, the pixel 102 is first reset by closing the switch 136 (if it was previously in the open position) and by turning on the Transistor 130. The potential Vref is then applied to the node 126. The heating voltage is applied to the ends of the second portion 111 of the pyroelectric capacitance of the pixel 102. The pyroelectric capacitance is at this time at a temperature T.sub.L switch 136 is then opened. The integration then starts at the pyroelectric capacitance of the pixel 102, during an integration time ζ for example equal to about 30 μs. Electrical charges are generated by the pyroelectric capacitance of the pixel 102 during this integration time ζ. Since the switch 136 is open and the transistor 130 is on, the electrical charges generated by the pyroelectric capacitance of the pixel 102 flow towards the capacitor 134 associated with the pixel 102. At the end of this integration time ζ, the pyroelectric capacitance is at the temperature Ti and has therefore been subjected to a temperature variation ΔΤ = Ti - To, the electrical charges generated by the pyroelectric capacitance and stored in the capacitor 134 being the consequence of this temperature variation. The electrical potential at the output of amplifier 132 is therefore
    Vout = Q.Cref + Vref, with Q corresponding to the generated electrical charges and Cref the value of the capacitor 134. This potential is then read and sampled by the analog / digital converter 138. When the reading and sampling operation of the The result is complete, the switch 136 is switched to the closed position to discharge the capacitor 134 and the transistor 130 is turned off to isolate the pixel 106 and allow reading of another pixel of the column. This reading operation is implemented simultaneously for all the pixels 102 of the same line.
    During such a reading, the electric heating potential applied to one of the electrodes of the pyroelectric capacitance is constant throughout the reading of a pixel. On the other hand, since the second portion of conductive material 111 on which this potential is applied is common to several pixels 102, the value of the heating potential applied to one of the electrodes of the pyroelectric capacitors each of these pixels 102 is different from the one pixel to another. For example, considering the second embodiment shown in FIG. 4, the upper electrode 110 of the pyroelectric capacitor closest to the end 116 is subjected to a potential substantially equal to heating. The upper electrode 110 of the next pyroelectric capacitance is subjected to an electrical potential substantially equal to the heating-6V. The values of the electric potentials applied to the upper electrodes 110 of the pyroelectric capacitors decrease proportionally to their distance from the end 116. When the conductive portion 120 is connected to ground, the upper electrode 110 of the last capacitor pyroelectric, corresponding to that which is close to the conductive portion 120, is subjected to an electrical potential substantially equal to 0V, that is to say the electric potential of the mass. This variation of the electric heating potential applied from one pixel to the other does not modify the heating carried out from one pixel to the other because the flow of the current in the second conductive portion 111 causing the heating is the same in the entire second conductive portion 111 and the same for all the pixels 102 because the heating resistors 128 of all the pixels 102 are identical. When reading the pixels, the values of the potentials on each electrode are different from one pixel to another. On the other hand, for the same variation of temperature, the voltage across the pyroelectric capacitors is identical. However, it is the excess charges generated relative to the reference voltage that are read, whether positive or negative. For example, in the case of the first exemplary embodiment shown in FIG. 6, the resulting read voltage obtained at the output of the amplifier 132 is V0ut = Vref ± at QjCf, with Cf corresponding to the value of the capacitor 134, which is independent of the voltage across the pyroelectric capacitors when the heating potential is stable during the integration time.
    In the first embodiment previously described with reference to FIG. 6, the generated electrical charges are read directly by the amplifier 132. Since the electronic reading elements in each pixel 102 correspond to only one transistor 130, this first exemplary embodiment is well suited for an embodiment of transistor 130 in amorphous TFT technology, the cost of which is low. In addition, in this first exemplary embodiment, the reading time by the amplifier 132 is short, for example between about 1 and 10 ps, or even zero if the pixel 102 is connected to the amplifier 132 during integration as this is the case in the example described above. Finally, in TFT technology, the circuit comprising the pixels 102 is distinct from that comprising the elements 132, 134, 136 and 138, these circuits being subsequently assembled by transfer on one another or by other solutions ("Chip on Flex, "son, etc.).
    FIG. 7 represents a second exemplary embodiment of the electronic elements making it possible to read in voltage the measurements of the pixels 102 of the sensor 100.
    As in the first exemplary embodiment, each pixel 102 comprises the pyroelectric capacitor connected to the active node 126. Each pixel 102 is also provided with a reset transistor 140, one of the source and drain electrodes of which is connected to the node 126. and the other of the source and drain electrodes is subjected to the application of a Vreset reset voltage. A reset control signal of the pixel 102 is applied to the gate of the reset transistor 140. This reset makes it possible to set the electrical potential of the node 126 to a known value (here Vreset) at the beginning of the integration, as well as to empty the charges of the pyroelectric capacitance once the reading is finished. As for the control of the pixel line selection transistor 130, the control of the reset transistor 140 may be common to a whole line of pixels 102.
    Unlike the first embodiment in which the node 126 is directly connected to a first of the source and drain electrodes of the transistor 130, the node 126 is here connected to a gate of another transistor 142 forming a voltage follower and realizing an amplification of the read signal, that is to say the potential of the reading electrode 108, evolving with the electric charges generated by the pyroelectric capacitance of the pixel 102. An electrical supply potential is applied to a first of the electrodes source and drain of the transistor 142 and a second one of the source and drain electrodes of the transistor 142 is connected to the first of the source and drain electrodes of the transistor 130. A second of the source and drain electrodes of the transistor 130 is connected to the input of the read circuit 131 formed of an amplifier 144, inverter or not, gain G. The output of the amplifier 144 is connected to the input of the Analog / digital converter 138. A current source 143 is also coupled to the input of the amplifier 144 for rapidly biasing the transistor 142 in an operating area where it behaves as a voltage follower.
    In this second exemplary embodiment, the reading of a pixel 102 is carried out via three transistors, for example of the MOS type. The reading is voltage and benefits from the local amplification performed by the follower transistor 142 which blocks the flow of the charges on the active node 126. The transistors can be made from polysilicon or IGZO.
    This second exemplary embodiment performs a non-destructive reading of the charges generated by the pyroelectric capacitors. Indeed, as the active node 126 has not been reset, the generated electrical charges are retained.
    In the case of the second exemplary embodiment shown in FIG. 7, the resulting read voltage obtained at the output of the amplifier 144 depends on the value of the pyroelectric capacitance plus the parasitic capacitances present on the active node 126, and is equal to G (Vreset ± ΔΟ / Cpyro). In this second embodiment, it is possible to heat the portions 106 of pyroelectric material by applying a difference in potentials ranging from heating to ground between the ends 116 and 118 of each of the second portions of conductive material 111.
    When the electronic reading elements correspond to those of the second embodiment previously described, the reading of one of the pixels 102 of the device 100 can be carried out by implementing the following steps: resetting the pyroelectric capacitance by setting the the on state of the reset transistor 140; - Turning off the pixel line selection transistor 130; ignition of the heating of the pyroelectric material portion 106 of the pixel 102 by the application of the heating potential to one of the electrodes of the pyroelectric capacitance associated with the pixel 102 intended to be read; - turning off the reset transistor 140; the beginning of integration of the pixel 102 which is then at the temperature To; waiting for the integration time ζ, for example equal to 30 ps; reading the pixel 102, corresponding to the on-state of the transistor 130 which makes it possible to copy the voltage received on the gate of the follower transistor 142 to the amplifier 144 and to sample the value obtained after this conversion, corresponding to the temperature variation ΔΤ = Ti-To; - Turning off the heating of the portion of pyroelectric material 106.
    In general, the integration time ζ will be between approximately 30 μs and 1 ms in order to obtain a temperature variation of between approximately 0.5 K and 2 K.
    In addition, whether the reading is performed in loads (or current) or voltage, the heating on and off are not performed during integration time ζ and reading. Indeed, the ignition of the heating significantly varies the potential of one of the electrodes pyroelectric capabilities. This variation is therefore found on the other electrode of the pyroelectric capacitors. This variation of potential is, for some pixels, much greater than the signal intended to be read by these pixels. For the same reason, it is advisable to limit as much as possible all the parasites on the heating potential during the integration time, in particular those related to the currents coming from the operation of other electronic parts.
    Whatever the embodiment of the electronic reading elements of the sensor 100, the pixels 102 are advantageously read line by line.
    Although not shown, the sensor 100 includes a control circuit for applying the control signals described above to control the reading of the pixels 102.
    The thermal pattern detected by the sensor 100 advantageously corresponds to a fingerprint.
    Although not shown, the sensor 100 may further comprise an electronic processing circuit adapted to construct an overall image of the thermal pattern from the measurements made at each pixel 102. This electronic processing circuit may also be able to compare this image with several images stored in a database in order to identify whether the detected thermal pattern corresponds to one of those stored in the database. The electronic processing circuit may also be able to display an image of the detected thermal pattern.
    In addition, the sensor 100 advantageously comprises, in addition to the thermal detection elements described above, optical or capacitive detection elements for detecting an image of the element whose thermal pattern is also detected. Thus, the sensor 100 may comprise an array of optical detection pixels interleaved with the thermal detection pixels.
    权利要求:
    Claims (14)
    [1" id="c-fr-0001]
    A thermal pattern sensor (100) having a plurality of pixels (102), each pixel (102) comprising at least one pyroelectric capacitance formed by at least one pyroelectric material portion (106) disposed between a lower electrode (108) and an electrode upper (110), wherein one (108) of the lower and upper electrodes corresponds to a reading electrode of the pixel (102) and wherein a heating element adapted to heat the pyroelectric material portion (106) of the pyroelectric capacitance said pixel (102) by Joule effect when measuring the thermal pattern by the pyroelectric capacitance of said pixel (102) is formed by the other (110) of the lower and upper electrodes.
    [2" id="c-fr-0002]
    2. Sensor (100) according to claim 1, wherein the pyroelectric material comprises PVDF and / or P (VDF-TrFE) and / or PZT.
    [3" id="c-fr-0003]
    3. Sensor (100) according to one of the preceding claims, further comprising a substrate (104) on which are disposed the pyroelectric capacitances of the pixels (102), the lower electrode (108) of the pyroelectric capacitance of each pixel ( 102) being disposed between the substrate (104) and the pyroelectric material portion (106) of the pyroelectric capacitance of the pixel (102), and wherein the upper electrode (110) of the pyroelectric capacitance of each pixel (102) forms the heating element of said pixel (102).
    [4" id="c-fr-0004]
    4. Sensor (100) according to one of the preceding claims, wherein the electrodes (108) of the pyroelectric capacitances of the pixels (102) corresponding to the reading electrodes of the pixels (102) are formed by first portions of distinct electrically conductive material. and electrically isolated from each other.
    [5" id="c-fr-0005]
    5. Sensor (100) according to one of the preceding claims, wherein the electrodes (110) of the pyroelectric capacitances of the pixels (102) corresponding to the heating elements are electrically connected to each other and are formed by at least a second portion (111). of electrically conductive material having two ends (116, 118) on which a heating voltage of the pyroelectric material (106) of the pyroelectric capacitances of the pixels (102) is adapted to be applied.
    [6" id="c-fr-0006]
    6. Sensor (100) according to one of claims 1 to 4, wherein: - the pixels (102) are arranged forming a matrix of several rows and several columns of pixels (102), - the electrodes (110) of the pyroelectric capacitances of each pixel line (102) corresponding to the heating elements are electrically connected to each other and are formed by a second portion (111) of electrically conductive material distinct from the second portions (111) of electrically conductive material of the other pixel lines ( 102), - each second portion (111) of electrically conductive material has two ends (116, 118) on which a heating voltage of the pyroelectric material (106) of the pyroelectric capacitances of the pixel line (102) is adapted to be applied .
    [7" id="c-fr-0007]
    7. Sensor (100) according to claim 6, wherein one of the two ends (118) of each second portion (111) of electrically conductive material are electrically connected to each other.
    [8" id="c-fr-0008]
    8. Sensor (100) according to one of claims 6 or 7, wherein each second portion (111) of electrically conductive material comprises, at each of the electrodes (110) formed by said second portion (111) of electrically material. conductor, portions (112) whose electrical resistance is greater than that of the remainder (114) of said second portion (111) of electrically conductive material.
    [9" id="c-fr-0009]
    9. Sensor (100) according to one of claims 5 to 8, further comprising means for applying the heating voltage to the ends (116,118) of the second or portions (111) of electrically conductive material such that, during a measurement of the thermal pattern by one of the pixels (102), the value of the electric potential on the electrode (110) forming the heating element of said pixel (102) is substantially constant throughout the measurement.
    [10" id="c-fr-0010]
    The sensor (100) according to one of claims 5 to 9, wherein the pixels (102) are arranged forming a matrix of several lines and several columns of pixels (102), and wherein each pixel (102) comprises at least one line selection transistor (130) adapted to receive on its gate a control signal common to the entire pixel line (102) to which said pixel (102) belongs and, when the line selection transistor (130) is in the conducting state, electrically connecting the reading electrode of said pixel (102) to a read circuit (131) comprising at least one amplifier (132, 144) and common to the pixels (102) of the column to which belongs to said pixel (102).
    [11" id="c-fr-0011]
    The sensor (100) of claim 10, wherein the line selection transistor (130) is connected to an inverting input of the amplifier (132), and wherein the read circuit (131) further comprises: means for applying a reference voltage to a non-inverting input of the amplifier (132); a switch (136) connecting the inverting input of the amplifier (132) to the output of the amplifier (132); a capacitance (134) connecting the inverting input of the amplifier (132) to the output of the amplifier (132).
    [12" id="c-fr-0012]
    12. Sensor (100) according to claim 11, further comprising a control circuit capable of implementing, for the reading of a pixel line (102), at least the following steps: - setting to the on state pixel line selection transistors (130) (102) of said line and closing of the switches (136) of the read circuits (131); - applying the heating voltage to the ends (116,118) of the second portion (111) of electrically conductive material or one of the second portions (111) of electrically conductive material associated with said pixel line (102); opening the switches (136) of the read circuits (131); waiting for an integration time corresponding to the measurement of the thermal pattern by the pixels of said line; - reading of an output voltage of the amplifier (132).
    [13" id="c-fr-0013]
    The sensor (100) according to claim 10, wherein each pixel (102) further comprises: - a reset transistor (140) adapted to apply a reset voltage to the reading electrode (108) of the pixel (102) ); a voltage follower transistor (142) having a gate connected to the reading electrode (108) of the pixel (102) and having one of the source and drain electrodes connected to the transistor (130) for selecting a line.
    [14" id="c-fr-0014]
    14. The sensor (100) according to claim 13, further comprising a control circuit adapted to implement, for reading a pixel line (102), at least the following steps: - setting to the on state transistors (140) for resetting the pixels (102) of said line; - setting off the line selection transistors (130) of the pixels (102) of said line; - applying the heating voltage to the ends (116,118) of the second portion (111) of electrically conductive material or one of the second portions (111) of electrically conductive material associated with said pixel line (102); - turning off the pixel reset transistors (140) (102) of said line; waiting for an integration time corresponding to the measurement of the thermal pattern by the pixels of said line; - Turning on the line selection transistors (130) of the pixels (102) of said line; reading of the voltages applied to the inputs of the amplifiers (144) of the reading circuits.
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    同族专利:
    公开号 | 公开日
    US10378961B2|2019-08-13|
    CN108700471A|2018-10-23|
    EP3384257A1|2018-10-10|
    WO2017093179A1|2017-06-08|
    US20180356291A1|2018-12-13|
    FR3044407B1|2020-05-22|
    BR112018010991A2|2018-12-11|
    BR112018010991B1|2021-06-29|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    EP0798546A1|1996-03-25|1997-10-01|Oriental System Technology Inc.|Absolute radiation thermometer|
    US6532040B1|1998-09-09|2003-03-11|Pictos Technologies, Inc.|Low-noise active-pixel sensor for imaging arrays with high speed row reset|
    WO2008107450A1|2007-03-06|2008-09-12|Atmel Switzerland|Sensor manufacture with data storage|
    US20090206851A1|2008-02-20|2009-08-20|Himax Technologies Limited|Capacitive Fingerprint Sensor and the Panel Thereof|
    EP2385486B1|2010-05-06|2013-03-13|Commissariat à l'Énergie Atomique et aux Énergies Alternatives|Transducer for temporal variation of temperature, electronic chip including transducteur and method for manufacturing chip|FR3069354A1|2017-07-24|2019-01-25|Commissariat A L'energie Atomique Et Aux Energies Alternatives|THERMAL SENSOR WITH TWO OVERLAY PYROELECTRIC PORTIONS FOR MEASURING A DIFFERENTIAL LOAD|
    EP3483787A1|2017-11-13|2019-05-15|Commissariat à l'énergie atomique et aux énergies alternatives|Method for making a stack of layers for a thermal matrix sensor|US4394773A|1980-07-21|1983-07-19|Siemens Corporation|Fingerprint sensor|
    US4429413A|1981-07-30|1984-01-31|Siemens Corporation|Fingerprint sensor|
    NO951427D0|1995-04-11|1995-04-11|Ngoc Minh Dinh|Method and apparatus for measuring patterns in a partially heat conducting surface|
    FR2749955B1|1996-06-14|1998-09-11|Thomson Csf|FINGERPRINT READING SYSTEM|
    US7910902B2|2004-09-22|2011-03-22|Next Biometrics As|Apparatus for fingerprint sensing based on heat transfer|
    US9494995B2|2013-06-03|2016-11-15|Qualcomm Incorporated|Devices and methods of sensing|
    FR3015453B1|2013-12-20|2016-01-29|Areva Nc|PROCESS FOR THE SYNTHESIS OF A MIXED PEROXIDE OR HYDROXOPEROXIDE OF AN ACTINYL AND AT LEAST ONE DI-, TRI- OR TETRACHARGE METAL CATION, PEROXIDE OR MIXED HYDROXOPEROXIDE THUS OBTAINED AND THEIR APPLICATIONS|
    FR3016115B1|2014-01-06|2016-02-05|Commissariat Energie Atomique|CONTAINER INTERACTING WITH A REDUCED ENERGY CONSUMPTION USER BEFORE UNPACKING|
    FR3054696B1|2016-07-29|2019-05-17|Commissariat A L'energie Atomique Et Aux Energies Alternatives|THERMAL PATTERN SENSOR WITH MUTUALIZED HEATING ELEMENTS|
    FR3054697B1|2016-07-29|2019-08-30|Commissariat A L'energie Atomique Et Aux Energies Alternatives|METHOD OF CAPTURING THERMAL PATTERN WITH OPTIMIZED HEATING OF PIXELS|FR3054698B1|2016-07-29|2018-09-28|Commissariat A L'energie Atomique Et Aux Energies Alternatives|ACTIVE THERMAL PATTERN SENSOR COMPRISING A PASSIVE MATRIX OF PIXELS|
    CN107578026B|2017-09-15|2020-11-27|京东方科技集团股份有限公司|Fingerprint detection circuit, detection method of fingerprint detection circuit and fingerprint sensor|
    FR3074577B1|2017-12-04|2020-10-23|Commissariat Energie Atomique|THERMAL PATTERN SENSOR WITH PYROELECTRIC CAPACITY AND HARD PROTECTIVE LAYER|
    FR3075954B1|2017-12-22|2020-01-10|Commissariat A L'energie Atomique Et Aux Energies Alternatives|PYROELECTRIC SENSOR WITH ELECTRO-MAGNETIC SHIELDING COMPRISING A COMPOSITE MATERIAL.|
    FR3075953B1|2017-12-22|2021-09-17|Commissariat Energie Atomique|PYROELECTRIC SENSOR WITH IMPROVED ELECTRO-MAGNETIC SHIELDING.|
    FR3098905A1|2019-07-18|2021-01-22|Commissariat A L'energie Atomique Et Aux Energies Alternatives|DUAL INTEGRATION THERMAL PATTERN CAPTURE SENSOR AND METHOD|
    法律状态:
    2016-11-30| PLFP| Fee payment|Year of fee payment: 2 |
    2017-06-02| PLSC| Publication of the preliminary search report|Effective date: 20170602 |
    2017-11-30| PLFP| Fee payment|Year of fee payment: 3 |
    2019-11-29| PLFP| Fee payment|Year of fee payment: 5 |
    2020-11-30| PLFP| Fee payment|Year of fee payment: 6 |
    2021-11-30| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1561579A|FR3044407B1|2015-11-30|2015-11-30|THERMAL PATTERN SENSOR|
    FR1561579|2015-11-30|FR1561579A| FR3044407B1|2015-11-30|2015-11-30|THERMAL PATTERN SENSOR|
    CN201680070148.XA| CN108700471A|2015-11-30|2016-11-28|Thermal image sensor|
    PCT/EP2016/078988| WO2017093179A1|2015-11-30|2016-11-28|Thermal pattern sensor|
    EP16802046.9A| EP3384257A1|2015-11-30|2016-11-28|Thermal pattern sensor|
    BR112018010991-6A| BR112018010991B1|2015-11-30|2016-11-28|THERMAL PATTERN SENSOR|
    US15/779,787| US10378961B2|2015-11-30|2016-11-28|Thermal pattern sensor|
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